IXFT58N20Q TRL

HiPerFETTM Power MOSFETs IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS(on) Q-Class = 200 V = 58 A = 40 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 58 A IDM TC = 25°C, pulse width limited by TJM 232 A IAR TC = 25°C 58 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-247 TO-268 W °C °C °C 300 °C 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) g g Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 1999 IXYS All rights reserved 300 -55 ... +150 150 -55 ... +150 200 2.0 TJ = 25°C TJ = 125°C V 4.0 V ±100 nA 25 1 µA mA 40 mΩ TO-268 (D3) (IXFT) Case Style G (TAB) S TO-247 AD (TAB) G = Gate S = Source D = Drain TAB = Drain Features l l l l l l IXYS advanced low Qg process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l Easy to mount Space savings High power density 98523A (5/99) IXFH IXFT Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 24 Ciss 34 pF 870 pF Crss 280 pF td(on) 20 ns VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 ns td(off) RG = 1.5 Ω (External) 40 ns tf 13 ns Qg(on) 98 140 nC 25 35 nC 45 70 nC 0.42 K/W Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK (TO-247) Source-Drain Diode 0.25 Test Conditions IS VGS = 0 V ISM Repetitive; VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IRM K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol IF = IS-di/dt = 100 A/µs, VR = 100 V TO-247 AD Outline S 3600 Coss 58N20Q 58N20Q 58 A 232 A 1.5 V 200 ns µC A 0.7 7 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Min. Recommended Footprint Dimensions in mm and inches IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025